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| IRG4BC15MDPBF insulated gate bipolar transistor with ultrafast soft recovery diode features e g n-channel c v ces = 600v v ce(on) typ. = 1.88v @v ge = 15v, i c = 8.6a parameter min. typ. max. units r jc junction-to-case - igbt ??? ??? 2.7 r jc junction-to-case - diode ??? ??? 7.0 c/w r cs case-to-sink, flat, greased surface ??? 0.50 ??? r ja junction-to-ambient, typical socket mount ??? ??? 80 wt weight ??? 2 (0.07) ??? g (oz) thermal resistance 8/2/04 absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 14 i c @ t c = 100c continuous collector current 8.6 i cm pulsed collector current 28 a i lm clamped inductive load current 28 i f @ t c = 100c diode continuous forward current 4.0 t sc short circuit withstand time 12 s i fm diode maximum forward current 16 a v ge gate-to-emitter voltage 20 v p d @ t c = 25c maximum power dissipation 49 p d @ t c = 100c maximum power dissipation 19 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw. 10 lbf?in (1.1 n?m) ? rugged: 10sec short circuit capable at vgs = 15v ? low vce(on) for 4 to 10khz applications ? igbt co-packaged with ultra-soft-recovery anti-parallel diodes ? industry standard to-220ab package benefits ? best value for appliance and industrial applications ? offers highest efficiency and short circuit capability for intermediate applications ? provides best efficiency for the mid range frequency (4 to 10khz) ? optimized for appliance and industrial applications up to 1hp ? high noise immune "positive only" gate drive - negative bias gate drive not necessary ? for low emi designs - requires little or no snubbing ? single package switch for bridge circuit applications ? compatible with high voltage gate drive ic's ? allows simpler gate drive t o -22 0 ab www.irf.com 1 short circuit rated fast igbt ? lead-free
IRG4BC15MDPBF parameter min. typ. max. units conditions q g total gate charge (turn-on) ??? 46 ??? i c = 8.6a qge gate - emitter charge (turn-on) ??? 4.2 ??? nc v cc = 400v q gc gate - collector charge (turn-on) ??? 15 ??? v ge = 15v t d(on) turn-on delay time ??? 21 ??? t j = 25c t r rise time ??? 38 ??? ns i c = 8.6a, v cc = 480v t d(off) turn-off delay time ??? 540 810 v ge = 15v, r g = 75 ? t f fall time ??? 350 530 energy losses include "tail" and e on turn-on switching loss ??? 0.32 ??? diode reverse recovery. e off turn-off switching loss ??? 1.93 ??? mj e ts total switching loss ??? 2.25 3.6 t d(on) turn-on delay time ??? 20 ??? t j = 150c, t r rise time ??? 42 ??? ns i c = 8.6a, v cc = 480v t d(off) turn-off delay time ??? 650 ??? v ge = 15v, r g = 75 ? t f fall time ??? 590 ??? energy losses include "tail" and e ts total switching loss ??? 3.0 ??? mj diode reverse recovery. l e internal emitter inductance ??? 7.5 ??? nh measured 5mm from package c ies input capacitance ??? 340 ??? v ge = 0v c oes output capacitance ??? 35 ??? pf v cc = 30v c res reverse transfer capacitance ??? 8.8 ??? ? = 1.0mhz t rr diode reverse recovery time ??? 28 42 ns t j = 25c ??? 38 57 t j = 125c i f = 4.0a i rr diode peak reverse recovery current ??? 2.9 5.2 a t j = 25c ??? 3.7 6.7 t j = 125c v r = 200v q rr diode reverse recovery charge ??? 40 60 nc t j = 25c ??? 70 110 t j = 125c di/dt 200a/s di (rec)m /dt diode peak rate of fall of recovery ??? 280 ??? a/s t j = 25c during t b ??? 240 ??? t j = 125c parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ??? ??? v v ge = 0v, i c = 250a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ??? 0.65 ??? v/c v ge = 0v, i c = 1.0ma v ce(on) collector-to-emitter saturation voltage ??? 1.88 2.3 i c = 8.6a v ge = 15v ??? 2.6 ??? v i c = 14a ??? 2.1 ??? i c = 8.6a, t j = 150c v ge(th) gate threshold voltage 4.0 ??? 6.5 v ce = v ge , i c = 250a ? v ge(th) / ? t j temperature coeff. of threshold voltage ??? -10 ??? mv/c v ce = v ge , i c = 250a g fe forward transconductance 2.3 3.4 ??? s v ce = 100v, i c = 6.5a i ces zero gate voltage collector current ??? ??? 250 a v ge = 0v, v ce = 600v ??? ??? 1400 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop ??? 1.5 1.8 v i c = 4.0a ??? 1.4 1.7 i c = 4.0a, t j = 150c i ges gate-to-emitter leakage current ??? ??? 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) electrical characteristics @ t j = 25c (unless otherwise specified) IRG4BC15MDPBF ! 0.1 1 10 100 0.1 1 10 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15v 20s pulse width ge t = 25 c j t = 150 c j 0.1 1 10 100 5.0 10.0 15.0 20.0 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5s pulse width cc t = 150 c j t = 25 c j 0.1 1 10 100 f , frequency ( khz ) 0 2 4 6 8 10 l o a d c u r r e n t ( a ) duty cycle : 50% tj = 125c tsink = 90c gate drive as specified turn-on losses include effects of reverse recovery power dissipation = 11w 60% of rated voltage ideal diodes IRG4BC15MDPBF "# $$%!! $&$ '( %$ )* ( $ "# $$ $ 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 3 6 9 12 15 t , case temperature ( c) maximum dc collector current(a) c -60 -40 -20 0 20 40 60 80 100 120 140 t j , junction temperature (c) 1.0 2.0 3.0 4.0 v c e , c o l l e c t o r - t o e m i t t e r v o l t a g e ( v ) i c = 17a v ge = 15v 80s pulse width i c = 9.0a i c = 4.3a IRG4BC15MDPBF %$ )* + * +%$ )* ,- * + . ,- * ( $ 0 10 20 30 40 50 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 9.0a cc c 0 10 20 30 40 50 60 70 80 r g , gate resistance ( ? ) 2.00 2.10 2.20 2.30 t o t a l s w i t c h i n g l o s s e s ( m j ) v cc = 480v v ge = 15v t j = 25c i c = 8.6a -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.1 1 10 100 t o t a l s w i t c h i n g l o s s e s ( m j ) r g = 75 ? v ge = 15v v cc = 480v i c = 17a i c = 9.0a i c = 4.3a 1 10 100 0 100 200 300 400 500 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies ge gc , ce res gc oes ce gc c ies c oes c res IRG4BC15MDPBF ,- * %$ !!, / 0.1 1 10 100 0.0 1.0 2.0 3.0 4.0 5.0 6.0 fm forward voltage drop - v (v) t = 150c t = 125c t = 25c j j j 2 4 6 8 10 12 14 16 18 i c , collector current (a) 0.0 2.0 4.0 6.0 8.0 10.0 t o t a l s w i t c h i n g l o s s e s ( m j ) r g = 75 ? tj = 150c v ge = 15v v cc = 480v 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) v ge = 20v t j = 125 safe operating area IRG4BC15MDPBF , * 0 0 0' .. 0 . 0 20 25 30 35 40 45 50 100 1000 f di /dt - (a/s) i = 8.0a i = 4.0a f f v = 200v t = 125c t = 25c r j j 0 2 4 6 8 10 12 14 100 1000 f i = 8.0a i = 4.0a v = 200v t = 125c t = 25c r j j di /dt - (a/s) f f 0 40 80 120 160 200 100 1000 f di /dt - (a/s) i = 8.0a i = 4.0a v = 200v t = 125c t = 25c r j j f f 100 1000 100 1000 f di /dt - (a/s) a i = 8.0a i = 4.0a v = 200v t = 125c t = 25c r j j f f IRG4BC15MDPBF same type device as d.u.t. d.u.t. 430f 80% of vce ! t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1+5s vce ic dt 90% vge +vge eoff = "# $%& vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery waveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt "# $%& "# $%& ! IRG4BC15MDPBF vg gate signal device under tes t current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v figure 19. clamped inductive load test circuit figure 20. pulsed collector current test circuit figure 18e. macro waveforms for figure 18a's test circuit IRG4BC15MDPBF notes: repetitive rating: v ge =20v; pulse width limited by maximum junction temperature v cc =80%(v ces ), v ge =20v, l=10h, r g = 75 ? pulse width 80s; duty factor 0.1%. pulse width 5.0s, single shot. data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/04 lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. hexfet 1- gate 2- drain 3- source 4- drain lead assignments igbts, copack 1- gate 2- collector 3- emitter 4- collector example: in the assembly line "c" t his is an irf 1010 lot code 1789 as s e mble d on ww 19, 1997 part number assembly lot code dat e code ye ar 7 = 1997 line c week 19 logo rectifier international note: "p" in assembly line position indicates "lead-free" |
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